Optoelectronic semiconductor chip and method of producing an optoelectronic semiconductor chip

US10833224B2 · kind B2 · utility

Assignee

• Osram OLED GMBH · DE

Inventors

• Fabian Kopp · Bukit Mertajam, MY
• Attila Molnar · Vadnais Heights, US

Key dates

• Filing date: Dec 18, 2017
• Grant date: Nov 10, 2020
• Expiry date: Dec 18, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/824

Abstract

An optoelectronic semiconductor chip includes a contact layer that impresses current directly into a first semiconductor region present in direct contact with a current web, the first semiconductor region is an n-side and a second semiconductor region is a p-side of a semiconductor layer sequence, and a second mirror layer is applied directly to a second semiconductor region, a plurality of contact fields and isolator fields are arranged alternately along a longitudinal direction of the current web, in the contact fields, the contact layer is in direct contact with the current web, and the isolator fields are free of the contact layer, and a first mirror layer is located between the current web and the first semiconductor region.