Electrical devices having radiofrequency field effect transistors and the manufacture thereof
US10833284B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2019 |
| Grant date | Nov 10, 2020 |
| Priority date | — |
| Expiry date | Jun 4, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/118
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Manufacturing an electrical device including providing a substrate having a surface and forming a radiofrequency field effect transistor on the surface, including forming a CNT layer on the surface and depositing a pin-down layer on the CNT layer. The pin-down layer is patterned to form separate pin-down anchor layers. A first portion of the CNT layer, located in-between the pin-down anchor layers and second portions of the CNT layer are covered by the pin-down anchor layers. For cross-sections in a direction perpendicular to a common alignment direction of the electrically conductive aligned carbon nanotubes in the first portion of the CNT layer the electrically conductive aligned carbon nanotubes have an average linear density in a range from 20 to 120 nanotubes per micron along the cross-sections, and at least 40 percent of the electrically conductive aligned carbon nanotubes are discrete from any carbon nanotubes of the CNT layer. A radiofrequency field effect transistor having such a CNT layer and pin-down anchor layers is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.