Laser device with a stepped graded index separate confinement heterostructure
US10833481B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2018 |
| Grant date | Nov 10, 2020 |
| Priority date | — |
| Expiry date | Dec 28, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Embodiments of the present disclosure are directed towards a laser device with a stepped graded index separate confinement heterostructure (SCH), in accordance with some embodiments. One embodiment includes a substrate area, and an active region adjacent to the substrate area. The active region includes an SCH layer, which comprises a first portion and a second portion adjacent to the first portion. A composition of the first portion is graded to provide a first conduction band energy increase over a distance from multiple quantum wells (MQW) to a p-side of a laser device junction. A composition of the second portion is graded to provide a second conduction band energy increase over the MQW to the p-side distance. The first conduction band energy increase is different than the second conduction band energy increase. Other embodiments may be described and/or claimed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.