Bulk-acoustic wave resonator and method for manufacturing the same
US10833646B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2017 |
| Grant date | Nov 10, 2020 |
| Priority date | — |
| Expiry date | Aug 8, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2009/02173
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A bulk-acoustic wave resonator includes: a membrane layer disposed on a substrate and forming a cavity; a lower electrode disposed on the membrane layer; a piezoelectric layer disposed on the lower electrode; an upper electrode disposed on the piezoelectric layer, and including a frame part disposed at an edge of an active area and having a thickness greater than that of a portion of the upper electrode disposed in a central portion of the active area; and a frequency adjusting layer disposed on the piezoelectric layer and the upper electrode. The frequency adjusting layer is excluded from an inclined surface of the frame part, or a thickness of a portion of the frequency adjusting layer on the inclined surface is less than that of other portions of the frequency adjusting layer. The frequency adjusting layer is disposed on a portion of the piezoelectric layer protruding from the upper electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.