Electro-absorption modulator
US10838240B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2019 |
| Grant date | Nov 17, 2020 |
| Priority date | — |
| Expiry date | Feb 26, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2202/108
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optoelectronic device comprising: a silicon-on-insulator (SOI) substrate, the substrate comprising: a silicon support layer; a buried oxide (BOX) layer on top of the silicon support layer; and a silicon device layer on top of the BOX layer; a waveguide region, where a portion of the silicon device layer and a portion of the BOX layer underneath the portion of the device layer have been removed, the portion of the BOX layer having been replaced with a layer of silicon and a layer of crystalline oxide on top of the silicon; and a waveguide structure located directly on top of the crystalline oxide layer, the waveguide structure including a P doped region, and an N doped region with an intrinsic region in-between, creating a PIN junction across which a bias can be applied to create a modulation region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.