Patent · US Active

Methods of forming SOI substrates

US10840080B2 · kind B2 · utility

1Cited by
3References
17Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJan 3, 2018
Grant dateNov 17, 2020
Priority date—
Expiry dateJan 3, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/30608
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Methods of forming SOI substrates are disclosed. In some embodiments, an epitaxial layer and an oxide layer are formed on a sacrificial substrate. An etch stop layer is formed in the epitaxial layer. The sacrificial substrate is bonded to a handle substrate at the oxide layer. The sacrificial substrate is removed. The epitaxial layer is partially removed until the etch stop layer is exposed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.