Fabrication of semiconductor substrates
US10840093B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2018 |
| Grant date | Nov 17, 2020 |
| Priority date | — |
| Expiry date | Feb 2, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02645
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor substrate comprises providing a crystalline base substrate, forming an insulating layer on the crystalline base substrate and forming a trench in the insulating layer. This exposes a seed surface of the base substrate. The trench has sidewalls and a bottom. The bottom corresponds to the seed surface of the base substrate. The method further comprises growing, at a first growth step, an elongated seed structure in the trench from the seed surface of the substrate and forming a cavity structure above the insulating layer. The cavity structure covers the elongated seed structure and extends laterally to the elongated seed structure. The method comprises a further step of growing, at a second growth step, the semiconductor substrate in the cavity structure from the elongated seed structure. The invention is notably also directed to corresponding semiconductor structures and corresponding semiconductor substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.