Semiconductor device having a radio frequency circuit and a method for manufacturing the semiconductor device
US10840128B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2019 |
| Grant date | Nov 17, 2020 |
| Priority date | — |
| Expiry date | Jan 14, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30655
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device, the method may include forming a first part of a hollow in first part of a first layer of the semiconductor device and coating a sidewall of the first part of the hollow with an etch stop material, wherein the forming of the first part of the hollow comprises performing at least one iteration of (i) anisotropic etching and (ii) deposition of the etch stop material; wherein when completed, the semiconductor device comprises a radio frequency (RF) circuit; forming a second part of the hollow in a second part of the first layer by performing isotropic etching that involves directing plasma through the first part of the hollow; wherein the second part of the hollow reaches either (a) a bottom of a second layer of the semiconductor device or (b) the RF circuit; and wherein at least a majority of the second part of the hollow is wider than at least a majority of the first part of the hollow.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.