Ultra-thin-body GaN on insulator device
US10840264B2 · kind B2 · utility
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Key dates
| Filing date | Sep 28, 2017 |
| Grant date | Nov 17, 2020 |
| Priority date | — |
| Expiry date | Sep 28, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An ultra-thin-body GaN-on-Insulator device and a method of manufacturing may be provided. The device comprises a front-end-of-line processed CMOS platform terminated with an interlayer dielectric material, a first bonding layer atop the interlayer dielectric material and an ultra-thin-body GaN-based hetero-structure terminated with a second bonding layer. The GaN-based hetero-structure is bonded with the second bonding layer to the first bonding layer of the CMOS platform building the ultra-thin-body GaN-on-Insulator device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.