Thin film transistor and display device
US10840274B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 20, 2016 |
| Grant date | Nov 17, 2020 |
| Priority date | — |
| Expiry date | May 20, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In an exemplary embodiment of the present disclosure, a thin film transistor including a gate electrode, an active layer, a source electrode, and a drain electrode on a non-pixel area of a substrate includes a first insulating layer that insulates the gate electrode from the source electrode and the drain electrode, and a second insulating layer that covers the source electrode and the drain electrode. According to an exemplary embodiment of the present disclosure, the first insulating layer and the second insulating layer are configured so as not to be extended to a pixel area of the substrate in order to reduce possible oscillation of transmittance depending on a viewing angle which occurs when a specific light of a light source passes through the pixel area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.