Image sensor
US10840285B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2019 |
| Grant date | Nov 17, 2020 |
| Priority date | — |
| Expiry date | Aug 8, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/813
Abstract
An image includes a semiconductor substrate having a first surface and a second surface that face each other; a first photoelectric conversion region and a second photoelectric conversion region provided in the semiconductor substrate; a gapfill pattern that is interposed between the first and second photoelectric conversion regions and extends from the second surface toward the first surface, wherein a first side surface of the gapfill pattern faces the first photoelectric conversion region and a second side surface of the gapfill pattern faces the second photoelectric conversion region; and a conductive pattern disposed on the gapfill pattern. The conductive pattern includes a first portion disposed on the first side surface, a second portion disposed on the second side surface, and a connecting portion that is disposed on a top surface of the gapfill pattern and electrically connects the first portion to the second portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.