Patent · US Active

Thin film resistor and top plate of capacitor sharing a layer

US10840322B2 · kind B2 · utility

2Cited by
4References
22Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 29, 2018
Grant dateNov 17, 2020
Priority date—
Expiry dateMar 29, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D86/85
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An integrated circuit (IC) includes a substrate with a semiconductor surface layer including functional circuitry having a plurality of interconnected transistors including a dielectric layer thereon with a metal stack including a plurality of metal levels over the dielectric layer. A thin film resistor (TFR) layer including at least one metal is within the metal stack. At least one capacitor is within the metal stack including a capacitor dielectric layer over a metal bottom plate formed from one of the metal levels. The capacitor top plate is formed from the TFR layer on the capacitor dielectric layer and there is at least one resistor lateral to the capacitor formed from the same TFR layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.