Semiconductor device
US10840368B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 8, 2019 |
| Grant date | Nov 17, 2020 |
| Priority date | — |
| Expiry date | May 8, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
Abstract
According to an embodiment, a semiconductor device includes a first electrode, a first semiconductor region, second semiconductor regions, third semiconductor regions, a first conductive portion, a gate electrode, and a second electrode. The gate electrode includes a first electrode portion and a second electrode portion. The first electrode portion opposes a portion of the first semiconductor region, one of the second semiconductor regions, and one of the third semiconductors in a first direction perpendicular to a second direction. The second electrode portion is located between the first electrode portion and another one of the third semiconductor regions in the first direction. The second electrode portion opposes another portion of the first semiconductor region, another one of the second semiconductor regions, and the other one of the third semiconductor regions. A second insulating portion including a void is provided between the first electrode portion and the second electrode portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.