Enhanced efficiency of LED structure with n-doped quantum barriers
US10840408B1 · kind B1 · utility
8Cited by
1References
20Claims
0Family size
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Key dates
| Filing date | May 28, 2019 |
| Grant date | Nov 17, 2020 |
| Priority date | — |
| Expiry date | May 28, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
The present invention provides light-emitting devices with improved quantum efficiency. The light emitting diode structure comprising: a p-doped layer, an n-doped layer; and a multiple quantum well structure sandwiched between the p-doped layer and n-doped layer, wherein the multiple quantum well structure comprising a quantum well disposed between n-doped barrier layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.