Patent · US Active

Optoelectronic device and method of producing an optoelectronic device

US10840413B2 · kind B2 · utility

1Cited by
0References
17Claims
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Key dates

Filing dateAug 24, 2017
Grant dateNov 17, 2020
Priority date
Expiry dateAug 24, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/034

Abstract

An optoelectronic device includes at least one optoelectronic semiconductor chip that emits radiation, at least one metallic reflecting surface, at least one functional component having a component surface different from the metallic reflecting surface, and a barrier layer stack for protection against corrosive gases arranged both on the at least one metallic reflecting surface and the component surface, wherein the barrier layer stack includes at least one inorganic oxide, oxynitride or nitride layer and at least one plasma-polymerized siloxane layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.