Optoelectronic device and method of producing an optoelectronic device
US10840413B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2017 |
| Grant date | Nov 17, 2020 |
| Priority date | — |
| Expiry date | Aug 24, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/034
Abstract
An optoelectronic device includes at least one optoelectronic semiconductor chip that emits radiation, at least one metallic reflecting surface, at least one functional component having a component surface different from the metallic reflecting surface, and a barrier layer stack for protection against corrosive gases arranged both on the at least one metallic reflecting surface and the component surface, wherein the barrier layer stack includes at least one inorganic oxide, oxynitride or nitride layer and at least one plasma-polymerized siloxane layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.