Patent · US Active

Optoelectronic component and method for producing an optoelectronic component

US10840416B2 · kind B2 · utility

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14Claims
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Key dates

Filing dateFeb 24, 2017
Grant dateNov 17, 2020
Priority date
Expiry dateFeb 24, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/0361
  • WIPO fieldMacromolecular chemistry, polymers
  • WIPO sectorChemistry

Abstract

The invention relates to an optoelectronic component (100) comprising a semiconductor chip (1) configured for emitting radiation, a conversion element (2) comprising quantum dots (5) and configured for wavelength conversion of radiation, wherein the conversion element (2) comprises a layer structure (7) having a plurality of inorganic barrier layers (31, 32, 33, 34), wherein the inorganic barrier layers (31, 32, 33, 34) are spatially separated from one another at least regionally by a hybrid polymer (4), wherein the hybrid polymer (4) comprises organic and inorganic regions that are covalently bonded to one another, wherein the quantum dots (5) are embedded in the hybrid polymer (4) and/or at least in one of the barrier layers (31, 32, 33, 34).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.