Nitride semiconductor light-emitting device and manufacture method therefore
US10840419B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 2017 |
| Grant date | Nov 17, 2020 |
| Priority date | — |
| Expiry date | Dec 28, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/83
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present application discloses a nitride semiconductor light-emitting device and a manufacture method thereof. The nitride semiconductor light-emitting device includes an epitaxial structure, wherein the epitaxial structure has a first face and a second face opposite to the first face, the first face is a (0001) nitrogen face and located at the n type side of the epitaxial structure, the second face is located at the p type side of the epitaxial structure, the n type side of the epitaxial structure is electrically contacted with an n type electrode, the p type side is electrically contacted with a p type electrode, and a ridge waveguide structure is formed on the first face. The nitride semiconductor light-emitting device, especially a III-V nitride semiconductor laser or a super-radiance light-emitting diode, of the present application, has the advantages of low resistance, low internal loss, small threshold current, small thermal resistance and good stability and reliability and the like, and meanwhile the preparation process is simple and is easily implemented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.