Magnetic tunnel junction device and magnetic resistance memory device
US10840435B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2019 |
| Grant date | Nov 17, 2020 |
| Priority date | — |
| Expiry date | Jul 31, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Provided are a magnetic tunnel junction device and a magnetic resistance memory device which are capable of both reducing a write current and increasing a write speed. The magnetic tunnel junction device includes a free layer having a first magnetization direction that is changeable, a pinned layer that is configured to maintain a second magnetization direction in a predetermined direction, and an insulating layer between the free layer and the pinned layer. The free layer includes a first free layer having perpendicular magnetic anisotropy and high polarizability, and a second free layer that is antiferromagnetic-coupled to the first free layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.