Diode laser with improved mode profile

US10840674B2 · kind B2 · utility

Assignee

• Forschungsverbund Berlin e.V. · DE

Inventors

• Thorben Kaul · Berlin, DE
• Götz Erbert · Löbau, DE
• Paul Crump · Berlin, DE

Key dates

• Filing date: Jan 25, 2018
• Grant date: Nov 17, 2020
• Expiry date: Jan 25, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S2301/18
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A diode laser comprises an n-type first cladding layer, an n-type first waveguide layer arranged on the first cladding layer, an active layer suitable for radiation generation and arranged on the first waveguide layer, a p-type second waveguide layer arranged on the active layer, a p-type second cladding layer which is arranged on the second waveguide layer, an n-type first intermediate layer being formed as a transition region between the first waveguide layer and the active layer, and a p-type second intermediate layer being formed as a transition region between the second waveguide layer and the active layer. The diode laser according to the invention is characterized in that the asymmetry ratio of the thickness of the first intermediate layer to the sum of the thickness of the first intermediate layer and the thickness of the second intermediate layer is less than or greater than 0.5.