Complementary current field-effect transistor devices and amplifiers
US10840854B2 · kind B2 · utility
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21References
16Claims
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Assignee
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Key dates
| Filing date | Jan 24, 2020 |
| Grant date | Nov 17, 2020 |
| Priority date | — |
| Expiry date | Jan 24, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a novel and inventive compound device structure, enabling a charge-based approach that takes advantage of sub-threshold operation, for designing analog CMOS circuits. In particular, the present invention relates to a solid state device based on a complementary pair of n-type and p-type current field-effect transistors, each of which has two control ports, namely a low impedance port and gate control port, while a conventional solid state device has one control port, namely gate control port. This novel solid state device provides various improvement over the conventional devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.