Surface acoustic wave devices using beryllium conductors
US10840875B2 · kind B2 · utility
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2References
28Claims
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Assignee
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Key dates
| Filing date | Oct 17, 2018 |
| Grant date | Nov 17, 2020 |
| Priority date | — |
| Expiry date | Nov 27, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/708
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Acoustic wave devices and methods of fabricating acoustic wave devices. A device includes a piezoelectric substrate and a conductor pattern formed on a surface of the piezoelectric substrate. The conductor pattern includes an interdigitated transducer (IDT) of a surface acoustic wave (SAW) resonator. The conductor pattern includes a substantially beryllium layer proximate the surface of the piezoelectric substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.