Single-crystal perovskite solid solutions with indifferent points for epitaxial growth of single crystals
US10844516B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 25, 2019 |
| Grant date | Nov 24, 2020 |
| Priority date | — |
| Expiry date | Jul 25, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/30
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Growth of single crystal epitaxial films of the perovskite crystal structure by liquid- or vapor-phase means can be accomplished by providing single-crystal perovskite substrate materials of improved lattice parameter match in the lattice parameter range of interest. Current substrates do not provide as good a lattice match, have inferior properties, or are of limited size and availability because cost of materials and difficulty of growth. This problem is solved by the single-crystal perovskite solid solutions described herein grown from mixtures with an indifferent melting point that occurs at a congruently melting composition at a temperature minimum in the melting curve in the pseudo-binary molar phase diagram. Accordingly, single-crystal perovskite solid solutions, structures, and devices including single-crystal perovskite solid solutions, and methods of making single-crystal perovskite solid solutions are described herein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.