Patent · US Active

Integrated photodetector with direct binning pixel

US10845308B2 · kind B2 · utility

26Cited by

75References

21Claims

0Family size

Assignee

Quantum-Si Incorporated · US

Inventors

Jonathan M. Rothberg · Paradise, US
Keith G. Fife · Palo Alto, US
David M. Boisvert · San Jose, US

Key dates

Filing date	Dec 22, 2017
Grant date	Nov 24, 2020
Priority date	—
Expiry date	Feb 3, 2039

Classification

Technology area (CPC G)Physics
CPC primaryG01N21/6458
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

An integrated circuit includes a photodetection region configured to receive incident photons. The photodetection region is configured to produce a plurality of charge carriers in response to the incident photons. The integrated circuit includes at least one charge carrier storage region. The integrated circuit also includes a charge carrier segregation structure configured to selectively direct charge carriers of the plurality of charge carriers directly into the at least one charge carrier storage region based upon times at which the charge carriers are produced.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.