Semiconductor device including non-volatile memory, a bias current generator and an on-chip termination resistor, method of fabricating the same and method of operating the same
US10845837B2 · kind B2 · utility
1Cited by
5References
23Claims
0Family size
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Key dates
| Filing date | Feb 11, 2019 |
| Grant date | Nov 24, 2020 |
| Priority date | — |
| Expiry date | Feb 11, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG05F3/16
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
A semiconductor device includes a voltage generator generating a reference voltage, a first reference current generator receiving the reference voltage and generating a reference current, a non-volatile memory storing a calibration code, a first bias current generator mirroring the reference current to generate a first bias current, and a second bias current generator adjusting the reference current according to the calibration code of the non-volatile memory to generate a second bias current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.