Analog, non-volatile, content addressable memory
US10847238B2 · kind B2 · utility
7Cited by
4References
23Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 13, 2019 |
| Grant date | Nov 24, 2020 |
| Priority date | — |
| Expiry date | Feb 13, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An analog content addressable memory cell includes a high side and a low side. The high side encodes a high bound on a range of values and includes a first voltage divider formed of a first programmable resistor and a first electronically controlled variable resistor. The low side encodes a low bound on the range of values and includes a second voltage divider formed of a second programmable resistor and a second electronically controlled variable resistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.