Method of forming a multilayer structure for a pixelated display and a multilayer structure for a pixelated display
US10847553B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 12, 2018 |
| Grant date | Nov 24, 2020 |
| Priority date | — |
| Expiry date | Jan 12, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a multilayer structure for a pixelated display and a multilayer structure for a pixelated display is provided. The method comprising providing a first wafer comprising first layers disposed over a first substrate, said first layers comprising non-silicon based semiconductor material for forming p-n junction LEDs (light emitting devices); providing a second partially processed wafer comprising silicon-based CMOS (Complementary Metal Oxide Semiconductor) devices formed in second layers disposed over a second substrate, said CMOS devices for controlling the LEDs; and bonding the first and second wafers to form a composite wafer via a double-bonding transfer process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.