Solid-state imaging element and method for manufacturing the same, and electronic device
US10847561B2 · kind B2 · utility
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11Claims
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Key dates
| Filing date | Sep 28, 2017 |
| Grant date | Nov 24, 2020 |
| Priority date | — |
| Expiry date | Sep 28, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/182
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present technology relates to a solid-state imaging element that is capable of suppressing occurrence of flares, ghosts, and color-mixing, and is capable of suppressing occurrence of stains caused by moisture and a method for manufacturing the same, and an electronic device. The solid-state imaging element includes a pixel in which a single-layered anti-reflective film is formed on a surface of a microlens and a pixel in which a double-layered anti-reflective film is formed on the surface of the microlens. For example, the present technology is applicable to a rear surface irradiation-type solid-state imaging element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.