Wearable systems with stacked photodetector assemblies
US10847563B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 19, 2019 |
| Grant date | Nov 24, 2020 |
| Priority date | — |
| Expiry date | Aug 19, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J2001/4466
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A wearable system includes a stacked photodetector assembly including a first wafer including a single photon avalanche diode (SPAD), the first wafer having a thickness T1 configured to minimize absorption by the first wafer of photons included in light incident upon the first wafer while the SPAD is in a disarmed state, and a second wafer having a thickness T2 including a fast gating circuit electrically coupled to the SPAD and configured to arm and disarm the SPAD, the second wafer bonded to the first wafer in a stacked configuration. The fast gating circuit includes a capacitor configured to be charged, while the SPAD is in the disarmed state, with a bias voltage by a voltage source, and supply, while the SPAD is in an armed state, the bias voltage to the SPAD such that a voltage across the SPAD is greater than a breakdown voltage of the SPAD.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.