Integrated circuit device and method of fabricating the same
US10847603B2 · kind B2 · utility
3Cited by
1References
20Claims
0Family size
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Key dates
| Filing date | Mar 22, 2019 |
| Grant date | Nov 24, 2020 |
| Priority date | — |
| Expiry date | Jun 4, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/033
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a capacitor of an integrated circuit, a crystallization induction film is obtained by oxidizing a surface of an electrode, and a dielectric structure is formed on the crystallization induction film, to reduce defect density generated in the dielectric film, improve leakage current, and reduce equivalent oxide thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.