Semiconductor device
US10847615B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 13, 2019 |
| Grant date | Nov 24, 2020 |
| Priority date | — |
| Expiry date | Mar 13, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate; a first semiconductor layer above the substrate, a second semiconductor layer between the substrate and the first semiconductor layer, first and second conductors, an electrode, and first and second insulating films. The first and second semiconductor layers have a first end and a second end opposite to the first end. The first conductor is connected to the first ends of the first and second semiconductor layers. The second conductor includes a first portion connected to the second ends of the first and second semiconductor layers and a second portion positioned inside the substrate. The electrode faces portions of first and second semiconductor layers between the first end and the second end thereof. The first insulating film is provided between the first semiconductor layer and the electrode; and the second insulating film is provided between the second semiconductor layer and the electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.