Semiconductor device having source field plate and method of manufacturing the same
US10847627B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2016 |
| Grant date | Nov 24, 2020 |
| Priority date | — |
| Expiry date | Feb 17, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A semiconductor device comprises: a substrate; a semiconductor layer formed on the substrate; a source electrode, a drain electrode and a gate electrode between the source electrode and the drain electrode formed on the semiconductor layer; and a source field plate formed on the semiconductor layer. The source field plate sequentially comprises: a start portion electrically connected to the source electrode; a first intermediate portion spaced apart from the semiconductor layer with air therebetween; a second intermediate portion disposed between the gate electrode and the drain electrode in a horizontal direction, without air between the second intermediate portion and the semiconductor layer; and an end portion spaced apart from the semiconductor layer with air therebetween.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.