Patent · US Active

Micron-sized light emiting diode designs

US10847675B2 · kind B2 · utility

0Cited by
2References
20Claims
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Assignee

Inventors

Key dates

Filing dateOct 10, 2019
Grant dateNov 24, 2020
Priority date
Expiry dateOct 10, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/816

Abstract

A emitting diode (LED) includes an epitaxial structure defining a base and a mesa on the base. The base defines a light emitting surface of the LED and includes current spreading layer. The mesa includes a thick confinement layer, a light generation area on the thick confinement layer to emit light, a thin confinement layer on the light generation area, and a contact layer on the thin confinement layer, the contact layer defining a top of the mesa. A reflective contact is on the contact layer to reflect a portion of the light emitted from the light generation area, the reflected light being collimated at the mesa and directed through the base to the light emitting surface. In some embodiments, the epitaxial structure grown on a non-transparent substrate. The substrate is removed, or used to form an extended reflector to collimate light.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.