Patent · US Active

Optoelectronic component and method of manufacturing an optoelectronic component

US10847684B2 · kind B2 · utility

1Cited by
1References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 21, 2018
Grant dateNov 24, 2020
Priority date
Expiry dateFeb 21, 2038

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC03C2217/944
  • WIPO fieldMaterials, metallurgy
  • WIPO sectorChemistry

Abstract

An optoelectronic component includes a semiconductor layer sequence having an active region that emits radiation during operation at least via a main radiation exit surface, and a self-supporting conversion element arranged in a beam path of the semiconductor layer sequence, wherein the self-supporting conversion element includes a substrate and a first layer, the first layer includes at least one conversion material embedded in a glass matrix, the glass matrix has a proportion of 50 to 80 vol. % in the first layer, the substrate is free of the glass matrix and the conversion material and mechanically stabilizes the first layer, and the first layer has a layer thickness of less than 200 μm.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.