Optoelectronic component and method of manufacturing an optoelectronic component
US10847684B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2018 |
| Grant date | Nov 24, 2020 |
| Priority date | — |
| Expiry date | Feb 21, 2038 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2217/944
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
An optoelectronic component includes a semiconductor layer sequence having an active region that emits radiation during operation at least via a main radiation exit surface, and a self-supporting conversion element arranged in a beam path of the semiconductor layer sequence, wherein the self-supporting conversion element includes a substrate and a first layer, the first layer includes at least one conversion material embedded in a glass matrix, the glass matrix has a proportion of 50 to 80 vol. % in the first layer, the substrate is free of the glass matrix and the conversion material and mechanically stabilizes the first layer, and the first layer has a layer thickness of less than 200 μm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.