Method for producing a component of rare earth metal-doped quartz glass
US10851008B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2018 |
| Grant date | Dec 1, 2020 |
| Priority date | — |
| Expiry date | Jan 28, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03B2215/66
- WIPO fieldOther special machines
- WIPO sectorMechanical engineering
Abstract
A method for producing a component with portions of a rare earth metal-doped quartz glass, an intermediate product containing voids and consisting of a SiO2 raw material doped with rare earth metal is introduced into a sinter mold the interior of which is bordered by a carbonaceous mold wall, and is melted therein into the component by gas pressure sintering at a maximum temperature above 1500° C. A shield is arranged between the mold wall and the intermediate product. In order to indicate a modified gas pressure sintering method that ensures the production of rare earth metal-doped quartz glass with reproducible properties, a bulk material of amorphous SiO2 particles with a layer thickness of at least 2 mm is used as the shield, the softening temperature thereof being at least 20° C. higher than the softening temperature of the doped SiO2 raw material, and the bulk material being gas-permeable at the beginning of the melting of the intermediate product, and the bulk material sintering during melting into an outer layer that is gas-tight to a pressure gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.