Slurry composition for polishing and method for polishing semiconductor thin film with steps of a high aspect ratio
US10851266B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Nov 15, 2018 |
| Grant date | Dec 1, 2020 |
| Priority date | — |
| Expiry date | Nov 15, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a slurry composition for polishing and a method for polishing a semiconductor thin film with steps of a high aspect ratio, and more particularly, by comprising polishing particles, a compound represented by Chemical Formula 1 below, and a compound represented by Chemical Formula 2 below, to make a slurry composition for polishing that has a high polishing speed in high stepped regions while simultaneously protecting low stepped regions to obtain a high degree of flatness without leaving remaining steps after the completion of polishing, and a method for polishing a semiconductor thin film with steps of a high aspect ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.