Patent · US Active

Methods for evaporating and depositing high vapor pressure materials

US10851452B2 · kind B2 · utility

0Cited by
0References
13Claims
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Inventors

Key dates

Filing dateSep 14, 2017
Grant dateDec 1, 2020
Priority date
Expiry dateApr 15, 2038

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E60/10
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A method is disclosed, which can comprise via a transonic gas jet, depositing a thin film of LiPON on a substrate via a directed vapor deposition process. The transonic gas jet transports a thermally evaporated vapor cloud comprising the LiPON, wherein, the transonic gas jet comprises one of (a) substantially entirely nitrogen (N2) gas; or (b) nitrogen (N2) gas as a dopant in a concentration greater than 10% by volume in an inert carrier gas.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.