Utilizing a flash memory drive which includes single-level cell flash memory and multi-level cell flash memory
US10854290B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2015 |
| Grant date | Dec 1, 2020 |
| Priority date | — |
| Expiry date | May 28, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02D10/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A technique manages data in a flash memory drive which includes single-level cell (SLC) flash memory and multi-level cell (MLC) flash memory. The technique involves performing, within the flash memory drive, data placement operations on data which has been written to the flash memory drive. The technique further involves, based on the data placement operations, storing hot data in the SLC flash memory. The technique further involves, based on the data placement operations, storing cold data in the MLC flash memory, the hot data being accessed more frequently than the cold data. Such hot data and cold data can be distinguished based on access frequency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.