Patent · US Active

Magnetron, magnetron sputtering chamber, and magnetron sputtering apparatus

US10854434B2 · kind B2 · utility

1Cited by
2References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 18, 2019
Grant dateDec 1, 2020
Priority date
Expiry dateApr 18, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/332
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

Magnetron, magnetron sputtering chamber, and magnetron sputtering apparatus are provided. The magnetron has a rotation center, and includes a first outer magnetic pole and a first inner magnetic pole of opposite polarities. The first outer magnetic pole has an annular structure around the rotation center. The first inner magnetic pole is located on the inner side of the first outer magnetic pole, and a first magnetic field track is formed between the first inner magnetic pole and the first outer magnetic pole. A straight line starting from the rotation center and along one of the radial directions passes through the first magnetic field track at least twice in succession, and the magnetic-field directions at the two positions of the first magnetic field track that the straight line passes through twice in succession are opposite to each other.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.