Electrostatic chuck, substrate processing apparatus, and method of manufacturing semiconductor device using the same
US10854485B2 · kind B2 · utility
2Cited by
6References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2019 |
| Grant date | Dec 1, 2020 |
| Priority date | — |
| Expiry date | Dec 4, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electrostatic chuck, a substrate processing apparatus, and a method of manufacturing a semiconductor device are provided. The electrostatic chuck comprises a chuck base, an insulation plate on the chuck base, a first heater comprising a cell heater in the insulation plate, and a heater controller configured to control the cell heater. The heater controller obtains a resistance of the cell heater and compares the resistance with a threshold value to control a heating power provided to the cell heater.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.