Method for making electrical connection structure having alternating yttrium oxide and silicon oxide films
US10854509B2 · kind B2 · utility
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Key dates
| Filing date | Jan 4, 2019 |
| Grant date | Dec 1, 2020 |
| Priority date | — |
| Expiry date | Jan 4, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/466
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making an electrical connection structure includes: providing a substrate; forming a mating layer on the substrate; forming a connecting pad on the mating layer; forming a connecting line on the connecting pad and electrically coupling to the connecting pad; forming a covering layer covering the connecting line; and light irradiating the covering layer. Both the connecting pad and the connecting line are made of a metal or an alloy. The mating layer includes alternating yttrium oxide films and silicon oxide films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.