Semiconductor structure and fabrication method thereof

US10854558B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Beijing) Corporation · CN
• Semiconductor Manufacturing International (Shanghai) Corporation · CN

Inventors

• Deng Feng Ji · Shanghai, CN
• Jun Yang · Jingwei, CN
• Hong Liu · 红钢城街道, CN
• You He Sha · Shanghai, CN
• Chen Xiao Wang · Shanghai, CN
• Ying Li · Shanghai, CN

Key dates

• Filing date: Feb 26, 2019
• Grant date: Dec 1, 2020
• Expiry date: Feb 26, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L23/5283
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Semiconductor structures and fabrication methods are provided. An exemplary fabrication method includes providing a semiconductor substrate having at least a first region; forming a dielectric structure over the semiconductor substrate; forming a plurality of first openings in the dielectric structure in the first region by removing portions of the dielectric structure in the first region; forming a first barrier member in each of the plurality of first openings; forming second openings with sidewall surfaces exposing sidewall surfaces of the first barrier members by removing portions of the dielectric structure between adjacent first openings; and forming a second barrier member in each of the plurality of second openings.