Electrostatic discharge device
US10854595B2 · kind B2 · utility
1Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2018 |
| Grant date | Dec 1, 2020 |
| Priority date | — |
| Expiry date | Dec 13, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/921
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An Electro-Static Discharge (ESD) includes a first well having a first conductivity type on a substrate. The device further includes a second well within the first well. The second well has a second conductivity type. The device further includes a third well within the first well. The third well has the second conductivity type. The device further includes a first gate device disposed over the first well, a plurality of active regions between the first gate device and the dummy gate, and a dummy gate disposed within a space between the active regions. The dummy gate is positioned over a space between the second and third wells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.