Patent · US Active

Semiconductor diode

US10854598B2 · kind B2 · utility

0Cited by

8References

20Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Anton Mauder · Kolbermoor, DE
Philipp Seng · Munich, DE

Key dates

Filing date	Feb 12, 2015
Grant date	Dec 1, 2020
Priority date	—
Expiry date	Sep 4, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/8325
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

A semiconductor diode with integrated resistor has a semiconductor body with a front surface, a back surface and a diode structure with an anode electrode and a cathode electrode. A resistance layer arranged on the back surface of the semiconductor body provides the integrated resistor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.