Active matrix substrate, display device, and method for repairing defect of active matrix substrate
US10854639B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 15, 2019 |
| Grant date | Dec 1, 2020 |
| Priority date | — |
| Expiry date | Aug 1, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/931
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided is an active matrix substrate that includes a thin film transistor that has a first semiconductor layer and an ESD protection circuit. The ESD protection circuit includes a diode element. The diode element has a first electrode in a gate metal layer, a second semiconductor layer that overlaps a first electrode, and a second electrode and a third electrode electrically connected to a second semiconductor layer in a source metal layer. First and second electrodes of the diode element are electrically connected. The ESD protection circuit further includes a reserve diode structure. The reserve diode structure includes a fourth electrode in the gate metal layer and is in an electrically floating state, and a third semiconductor layer that is formed in the same layer as the first and second semiconductor layers and overlaps the fourth electrode with an insulation layer in between.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.