Display apparatus including thin film transistor and method of manufacturing the same
US10854644B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2018 |
| Grant date | Dec 1, 2020 |
| Priority date | — |
| Expiry date | Aug 25, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1216
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A display apparatus includes: at thin film transistor on a substrate; and a capacitor on the substrate, the capacitor including a first storage electrode and a second storage electrode. The thin film transistor includes: a semiconductor layer on the substrate, including: a channel region in which are disposed: bridged grain lines defined by portions of the semiconductor layer having an amount of a dopant, and semiconductor lines defined by portions of the semiconductor having a dopant amount less than that of the bridged grain lines and forming an interface with the bridged grain lines, and source and drain regions disposed at opposing sides of the channel region; and a gate electrode overlapping the semiconductor layer with a gate insulation film therebetween, the gate electrode including: first gate electrodes corresponding to the semiconductor lines, respectively, and a second gate electrode covering the gate electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.