Method for fabricating thin film transistor substrate
US10854645B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Feb 12, 2019 |
| Grant date | Dec 1, 2020 |
| Priority date | — |
| Expiry date | Feb 12, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
Abstract
A method for fabricating a thin film transistor substrate includes forming a buffer layer including at least one film on a base substrate, planarizing a surface of the buffer layer, and forming a thin film transistor on the buffer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.