Semiconductor device having first and second epitaxial materials
US10854748B2 · kind B2 · utility
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Key dates
| Filing date | Dec 11, 2017 |
| Grant date | Dec 1, 2020 |
| Priority date | — |
| Expiry date | Dec 11, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/40
Abstract
A semiconductor device includes a first gate stack over a substrate. The semiconductor device further includes a first epitaxial (epi) material in the substrate on a first side of the first gate stack. The first epi material includes a first upper surface having a first crystal plane. The semiconductor device further includes a second epi material in the substrate on a second side of the first gate stack opposite the first side. The second epi material includes a second upper surface having a second crystal plane, and the first crystal plane is different from the second crystal plane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.