Ferroelectric ceramics, electronic component and manufacturing method of ferroelectric ceramics
US10854808B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 19, 2015 |
| Grant date | Dec 1, 2020 |
| Priority date | — |
| Expiry date | Nov 24, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/078
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Ferroelectric ceramics including: a Pb(Zr1-BTiB)O3 seed crystal film formed on a foundation film; and a Pb(Zr1-xTix)O3 crystal film, wherein: the seed crystal film is formed by sputtering while the foundation film is being disposed on an upper side of a sputtering target and the foundation film is being made to face the sputtering target; in the seed crystal film, a Zr/Ti ratio on the crystal film side from the center in the thickness direction thereof is larger than a Zr/Ti ratio on the foundation film side from the center in the thickness direction thereof; the crystal film is crystallized by coating and heating a solution containing, in an organic solvent, a metal compound wholly or partially containing ingredient metals of the crystal film and a partial polycondensation product thereof; and the B and the x satisfy formulae 2 and 3, respectively, below, 0.1<B<1 formula 20.1<x<1 formula 3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.