Thin film transistor including a pair of auxiliary structures corresponding to source/drain and method of manufacturing the same
US10854831B2 · kind B2 · utility
1Cited by
3References
14Claims
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Key dates
| Filing date | Nov 6, 2017 |
| Grant date | Dec 1, 2020 |
| Priority date | — |
| Expiry date | Jul 20, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/6576
Abstract
A thin film transistor includes a pair of auxiliary structures facing each other on a substrate, an active layer including an organic semiconductor and continuously grown between the pair of auxiliary structures, a gate electrode on the substrate and overlapped by the active layer, and a source electrode and a drain electrode electrically connected to the active layer. A method of manufacturing the thin film transistor is disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.