High-rate CMP polishing method
US10857647B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 5, 2017 |
| Grant date | Dec 8, 2020 |
| Priority date | — |
| Expiry date | Oct 5, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
The invention provides a method for polishing or planarizing a wafer of at least one of semiconductor, optical and magnetic substrates. The method includes rotating a polishing pad having radial feeder grooves in the polishing layer separating the polishing layer into polishing regions. The radial feeder grooves include a series of biased grooves connecting a pair of adjacent radial feeder grooves. A majority of the biased grooves have either an inward bias toward the center or an outward bias toward the outer edge of the polishing pad. Pressing and rotating the wafer against the rotating polishing pad for multiple rotations of the polishing pad at a fixed distance from the center of the polishing pad increases polishing or planarizing removal rate of the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.